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| polyfet rf devices General Description LX803 Silicon VDMOS and LDMOS transistors designed specifically SILICON GATE ENHANCEMENT MODE for broadband RF applications. RF POWER LDMOS TRANSISTOR Suitable for Military Radios, Cellular and Paging Amplifier Base 45 Watts Single Ended Stations, Broadcast FM/AM, MRI, Laser Driver and others. Package Style LX2 TM "Polyfet" process features low feedback and output capacitances HIGH EFFICIENCY, LINEAR, resulting in high Ft transistors with HIGH GAIN, LOW NOISE high input impedance and high efficiency. o ABSOLUTE MAXIMUM RATINGS (TC = 25 C) Total Device Dissipation 120 Watts Junction to Case Thermal Resistance 1.25 o C/W Maximum Junction Temperature 200 o C Storage Temperature DC Drain Current Drain to Gate Voltage 70 V Drain to Source Voltage 70 V Gate to Source Voltage 20 V -65 o C to 150o C 6A RF CHARACTERISTICS ( SYMBOL Gps PARAMETER Common Source Power Gain Drain Efficiency Load Mismatch Tolerance MIN 11 55 TYP 45WATTS OUTPUT ) MAX UNITS dB % 20:1 Relative TEST CONDITIONS Idq = 1.2 A, Vds = 28.0 V, F = 1000 MHz Idq = 1.2 A, Vds = 28.0 V, F = 1000 MHz Idq = 1.2 A, Vds = 28.0 V, F = 1000 MHz VSWR ELECTRICAL CHARACTERISTICS (EACH SIDE) SYMBOL Bvdss Idss Igss Vgs gM Rdson Idsat Ciss Crss Coss PARAMETER Drain Breakdown Voltage Zero Bias Drain Current Gate Leakage Current Gate Bias for Drain Current Forward Transconductance Saturation Resistance Saturation Current Common Source Input Capacitance Common Source Feedback Capacitance Common Source Output Capacitance 1 2.4 0.35 16.5 90 3 45 MIN 65 3 1 7 TYP MAX UNITS V mA uA V Mho Ohm Amp pF pF pF TEST CONDITIONS Ids = 0.2 A, Vgs = 0V Vgs = 0V Vgs = 30V Vgs = Vds Vds = 28.0 V, Vds = 0 V, Ids = 0.3 A, Vds = 10V, Vgs = 5V Vgs = 20V, Ids = 7.5 A Vgs = 20V, Vds = 10V Vds = 28.0 V, Vgs = 0V, F = 1 MHz Vds = 28.0 V, Vgs = 0V, F = 1 MHz Vds = 28.0 V, Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 8/31/99 1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com LX803 POUT VS PIN GRAPH LX803 POUTVSPIN F=1000 MHZ; IDQ=1.2A VDS=28V ; 50 45 40 35 30 25 Efficiency = 60% 20 15 10 0 0.5 1 1.5 2 2.5 3 3.5 POUT CAPACITANCE VS VOLTAGE L2A 3DIE CAPACITANCE 15.00 1000 14.00 Ciss 13.00 100 12.00 10 Coss Crss 11.00 10.00 4 GAIN 1 0 5 10 PIN IN WATTS VDS IN VOLTS 15 20 25 30 IV CURVE L2B 3 DIE IV 18 16 14 12 ID IN AMPS 10 8 6 4 2 0 0 2 4 6 8 10 12 VDS INVOLTS Vg=6v vg=8v 14 16 18 20 0.1 0 2 4 1 10 100 ID AND GM VS VGS L2B 3 DICE ID, GM vs VG ID GM 6 8 10 12 14 vg=2v Vg=4v vg=10v vg=12v Vgs in Volts S11 AND S22 SMITH CHART PACKAGE DIMENSIONS IN INCHES Tolerance 0.XX +/- 0.01 0.XXX +/- 0.005 inches POLYFET RF DEVICES REVISION 8/31/99 1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com |
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